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Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O2 and Cl2/O2
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10.1116/1.4867355
/content/avs/journal/jvsta/32/3/10.1116/1.4867355
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/3/10.1116/1.4867355
/content/avs/journal/jvsta/32/3/10.1116/1.4867355
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/content/avs/journal/jvsta/32/3/10.1116/1.4867355
2014-03-03
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O2 and Cl2/O2
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/3/10.1116/1.4867355
10.1116/1.4867355
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