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Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases
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10.1116/1.4868616
/content/avs/journal/jvsta/32/3/10.1116/1.4868616
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/3/10.1116/1.4868616
/content/avs/journal/jvsta/32/3/10.1116/1.4868616
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/content/avs/journal/jvsta/32/3/10.1116/1.4868616
2014-03-17
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/32/3/10.1116/1.4868616
10.1116/1.4868616
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