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Effect of barrier thickness asymmetries on the electrical characteristics of AlAs/GaAs double barrier resonant tunneling diodes
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10.1116/1.586410
/content/avs/journal/jvstb/10/2/10.1116/1.586410
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/10/2/10.1116/1.586410
/content/avs/journal/jvstb/10/2/10.1116/1.586410
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/content/avs/journal/jvstb/10/2/10.1116/1.586410
1992-03-01
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of barrier thickness asymmetries on the electrical characteristics of AlAs/GaAs double barrier resonant tunneling diodes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/10/2/10.1116/1.586410
10.1116/1.586410
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