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A study of the anneal technique to recover the electrical characteristics of the packaged metal–oxide semiconductor field effect transistors damaged by Co‐60 irradiation
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10.1116/1.586441
/content/avs/journal/jvstb/10/2/10.1116/1.586441
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/10/2/10.1116/1.586441
/content/avs/journal/jvstb/10/2/10.1116/1.586441
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/content/avs/journal/jvstb/10/2/10.1116/1.586441
1992-03-01
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A study of the anneal technique to recover the electrical characteristics of the packaged metal–oxide semiconductor field effect transistors damaged by Co‐60 irradiation
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/10/2/10.1116/1.586441
10.1116/1.586441
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