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Effect of crystalline defects on electrical properties of heavily Si‐doped strain‐relaxed In0.5Ga0.5As layers grown by molecular beam epitaxy on GaAs
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10.1116/1.586805
/content/avs/journal/jvstb/11/3/10.1116/1.586805
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/11/3/10.1116/1.586805
/content/avs/journal/jvstb/11/3/10.1116/1.586805
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/content/avs/journal/jvstb/11/3/10.1116/1.586805
1993-05-01
2014-09-15
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of crystalline defects on electrical properties of heavily Si‐doped strain‐relaxed In0.5Ga0.5As layers grown by molecular beam epitaxy on GaAs
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/11/3/10.1116/1.586805
10.1116/1.586805
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