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Reactive ion etching of GaAs through wafer via holes using Cl2 and SiCl4 gases: A comprehensive statistical approach
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10.1116/1.587539
/content/avs/journal/jvstb/12/5/10.1116/1.587539
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/12/5/10.1116/1.587539
/content/avs/journal/jvstb/12/5/10.1116/1.587539
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/content/avs/journal/jvstb/12/5/10.1116/1.587539
1994-09-01
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reactive ion etching of GaAs through wafer via holes using Cl2 and SiCl4 gases: A comprehensive statistical approach
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/12/5/10.1116/1.587539
10.1116/1.587539
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