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Low temperature deposition of using or distributed electron cyclotron resonance microwave plasma
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10.1116/1.589579
/content/avs/journal/jvstb/15/6/10.1116/1.589579
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/15/6/10.1116/1.589579
/content/avs/journal/jvstb/15/6/10.1116/1.589579
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/content/avs/journal/jvstb/15/6/10.1116/1.589579
1997-11-01
2015-01-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature deposition of SiNx:H using SiH4–N2 or SiH4–NH3 distributed electron cyclotron resonance microwave plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/15/6/10.1116/1.589579
10.1116/1.589579
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