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In situ relaxed epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates
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10.1116/1.589972
/content/avs/journal/jvstb/16/3/10.1116/1.589972
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/3/10.1116/1.589972
/content/avs/journal/jvstb/16/3/10.1116/1.589972
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/content/avs/journal/jvstb/16/3/10.1116/1.589972
1998-05-01
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ relaxed Si1−xGex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/3/10.1116/1.589972
10.1116/1.589972
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