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Residence time effects on selective etching employing high density fluorocarbon plasma
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10.1116/1.590007
/content/avs/journal/jvstb/16/3/10.1116/1.590007
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/3/10.1116/1.590007
/content/avs/journal/jvstb/16/3/10.1116/1.590007
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/content/avs/journal/jvstb/16/3/10.1116/1.590007
1998-05-01
2015-04-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Residence time effects on SiO2/Si selective etching employing high density fluorocarbon plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/3/10.1116/1.590007
10.1116/1.590007
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