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GaAs/AlGaAs heterojunction bipolar transistors with a base doping grown by solid-source molecular beam epitaxy using
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10.1116/1.590224
/content/avs/journal/jvstb/16/3/10.1116/1.590224
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/3/10.1116/1.590224
/content/avs/journal/jvstb/16/3/10.1116/1.590224
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/content/avs/journal/jvstb/16/3/10.1116/1.590224
1998-05-01
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs/AlGaAs heterojunction bipolar transistors with a base doping 1020cm−3 grown by solid-source molecular beam epitaxy using CBr4
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/3/10.1116/1.590224
10.1116/1.590224
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