1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Electrical characterization and annealing behavior of defect introduced in Si during sputter etching in an Ar plasma
Rent:
Rent this article for
USD
10.1116/1.590100
/content/avs/journal/jvstb/16/4/10.1116/1.590100
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/4/10.1116/1.590100
/content/avs/journal/jvstb/16/4/10.1116/1.590100
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/avs/journal/jvstb/16/4/10.1116/1.590100
1998-07-01
2015-08-02
Loading

Full text loading...

This is a required field
Please enter a valid email address

Oops! This section does not exist...

Use the links on this page to find existing content.

752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization and annealing behavior of defect introduced in Si during sputter etching in an Ar plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/4/10.1116/1.590100
10.1116/1.590100
SEARCH_EXPAND_ITEM