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Dry-etching development characteristics of resist for focused-ion-beam lithography
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10.1116/1.590118
/content/avs/journal/jvstb/16/4/10.1116/1.590118
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/4/10.1116/1.590118
/content/avs/journal/jvstb/16/4/10.1116/1.590118
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/content/avs/journal/jvstb/16/4/10.1116/1.590118
1998-07-01
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dry-etching development characteristics of Se75Ge25 resist for focused-ion-beam lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/4/10.1116/1.590118
10.1116/1.590118
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