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Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation
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10.1116/1.590177
/content/avs/journal/jvstb/16/4/10.1116/1.590177
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/4/10.1116/1.590177
/content/avs/journal/jvstb/16/4/10.1116/1.590177
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/content/avs/journal/jvstb/16/4/10.1116/1.590177
1998-07-01
2015-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/4/10.1116/1.590177
10.1116/1.590177
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