1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application
Rent:
Rent this article for
USD
10.1116/1.590248
/content/avs/journal/jvstb/16/5/10.1116/1.590248
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/5/10.1116/1.590248
/content/avs/journal/jvstb/16/5/10.1116/1.590248
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/avs/journal/jvstb/16/5/10.1116/1.590248
1998-09-01
2014-07-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/16/5/10.1116/1.590248
10.1116/1.590248
SEARCH_EXPAND_ITEM