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Patterned regrowth of -GaAs by molecular beam epitaxy using arsenic passivation
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10.1116/1.590503
/content/avs/journal/jvstb/17/1/10.1116/1.590503
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/1/10.1116/1.590503
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/content/avs/journal/jvstb/17/1/10.1116/1.590503
1999-01-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Patterned regrowth of n-GaAs by molecular beam epitaxy using arsenic passivation
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/1/10.1116/1.590503
10.1116/1.590503
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