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Low temperature in situ boron doped Si epitaxial growth by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
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10.1116/1.590542
/content/avs/journal/jvstb/17/1/10.1116/1.590542
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/1/10.1116/1.590542
/content/avs/journal/jvstb/17/1/10.1116/1.590542
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/content/avs/journal/jvstb/17/1/10.1116/1.590542
1999-01-01
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature in situ boron doped Si epitaxial growth by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/1/10.1116/1.590542
10.1116/1.590542
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