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Au/Ge-based Ohmic contact to an AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer
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10.1116/1.590689
/content/avs/journal/jvstb/17/3/10.1116/1.590689
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/3/10.1116/1.590689
/content/avs/journal/jvstb/17/3/10.1116/1.590689
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/content/avs/journal/jvstb/17/3/10.1116/1.590689
1999-05-01
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Au/Ge-based Ohmic contact to an AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/3/10.1116/1.590689
10.1116/1.590689
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