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Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates
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10.1116/1.590707
/content/avs/journal/jvstb/17/3/10.1116/1.590707
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/3/10.1116/1.590707
/content/avs/journal/jvstb/17/3/10.1116/1.590707
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/content/avs/journal/jvstb/17/3/10.1116/1.590707
1999-05-01
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/3/10.1116/1.590707
10.1116/1.590707
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