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Properties of nanometer-sized metal–semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process
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10.1116/1.590838
/content/avs/journal/jvstb/17/4/10.1116/1.590838
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/4/10.1116/1.590838
/content/avs/journal/jvstb/17/4/10.1116/1.590838
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/content/avs/journal/jvstb/17/4/10.1116/1.590838
1999-07-01
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of nanometer-sized metal–semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/17/4/10.1116/1.590838
10.1116/1.590838
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