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Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration
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10.1116/1.591261
/content/avs/journal/jvstb/18/2/10.1116/1.591261
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/18/2/10.1116/1.591261
/content/avs/journal/jvstb/18/2/10.1116/1.591261
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/content/avs/journal/jvstb/18/2/10.1116/1.591261
2000-03-01
2015-07-05
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/18/2/10.1116/1.591261
10.1116/1.591261
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