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Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots
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10.1116/1.591413
/content/avs/journal/jvstb/18/3/10.1116/1.591413
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/18/3/10.1116/1.591413
/content/avs/journal/jvstb/18/3/10.1116/1.591413
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/content/avs/journal/jvstb/18/3/10.1116/1.591413
2000-05-01
2014-11-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/18/3/10.1116/1.591413
10.1116/1.591413
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