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GaInAsP grown on GaAs substrate by solid source molecular beam epitaxy with a valve phosphorous cracker cell
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10.1116/1.1305871
/content/avs/journal/jvstb/18/4/10.1116/1.1305871
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/18/4/10.1116/1.1305871
/content/avs/journal/jvstb/18/4/10.1116/1.1305871
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/content/avs/journal/jvstb/18/4/10.1116/1.1305871
2000-07-01
2014-07-13
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaInAsP grown on GaAs substrate by solid source molecular beam epitaxy with a valve phosphorous cracker cell
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/18/4/10.1116/1.1305871
10.1116/1.1305871
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