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Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices
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10.1116/1.1385687
/content/avs/journal/jvstb/19/4/10.1116/1.1385687
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/19/4/10.1116/1.1385687
/content/avs/journal/jvstb/19/4/10.1116/1.1385687
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/content/avs/journal/jvstb/19/4/10.1116/1.1385687
2001-07-01
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/19/4/10.1116/1.1385687
10.1116/1.1385687
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