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Characterization of atomic-layer-deposited silicon stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors
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10.1116/1.1387450
/content/avs/journal/jvstb/19/4/10.1116/1.1387450
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/19/4/10.1116/1.1387450
/content/avs/journal/jvstb/19/4/10.1116/1.1387450
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/content/avs/journal/jvstb/19/4/10.1116/1.1387450
2001-07-01
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/19/4/10.1116/1.1387450
10.1116/1.1387450
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