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Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
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10.1116/1.1481862
/content/avs/journal/jvstb/20/3/10.1116/1.1481862
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/20/3/10.1116/1.1481862
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/content/avs/journal/jvstb/20/3/10.1116/1.1481862
2002-06-05
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/20/3/10.1116/1.1481862
10.1116/1.1481862
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