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Selective and deep plasma etching of Comparison between different fluorocarbon gases mixed with or and influence of the residence time
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10.1116/1.1495502
/content/avs/journal/jvstb/20/4/10.1116/1.1495502
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/20/4/10.1116/1.1495502
/content/avs/journal/jvstb/20/4/10.1116/1.1495502
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/content/avs/journal/jvstb/20/4/10.1116/1.1495502
2002-08-06
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective and deep plasma etching of SiO2: Comparison between different fluorocarbon gases (CF4,C2F6,CHF3) mixed with CH4 or H2 and influence of the residence time
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/20/4/10.1116/1.1495502
10.1116/1.1495502
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