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Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded buffer layers
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10.1116/1.1576397
/content/avs/journal/jvstb/21/3/10.1116/1.1576397
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/21/3/10.1116/1.1576397
/content/avs/journal/jvstb/21/3/10.1116/1.1576397
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/content/avs/journal/jvstb/21/3/10.1116/1.1576397
2003-05-06
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1−x buffer layers
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/21/3/10.1116/1.1576397
10.1116/1.1576397
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