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Recombination dynamics of localized excitons in cubic multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
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10.1116/1.1593645
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    Affiliations:
    1 Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan,
    2 NICP, ERATO, Japan Science and Technology Corporation (JST), 2-4-6 Fujimi, Chiyoda-ku, Tokyo 102-0071, Japan,
    3 Photodynamics Research Center, RIKEN (Institute of Physical and Chemical Research), Sendai 980-0845, Japan
    4 Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
    5 Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
    6 COMET-NIMS, National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
    7 Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
    8 Department of Materials Engineering, University of California, Santa Barbara, California 93106 and
    9 NICP, ERATO, Japan Science and Technology Corporation (JST), 2-4-6 Fujimi, Chiyoda-ku, Tokyo 102-0071, Japan
    10 Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    J. Vac. Sci. Technol. B 21, 1856 (2003); http://dx.doi.org/10.1116/1.1593645
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2003-08-05
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/21/4/10.1116/1.1593645
10.1116/1.1593645
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