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Enhanced growth of low-resistivity NiSi on epitaxial on (001)Si with a sacrificial amorphous Si interlayer
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10.1116/1.1609472
/content/avs/journal/jvstb/21/5/10.1116/1.1609472
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/21/5/10.1116/1.1609472
/content/avs/journal/jvstb/21/5/10.1116/1.1609472
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/content/avs/journal/jvstb/21/5/10.1116/1.1609472
2003-09-16
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/21/5/10.1116/1.1609472
10.1116/1.1609472
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