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Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching
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10.1116/1.1609474
/content/avs/journal/jvstb/21/5/10.1116/1.1609474
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/21/5/10.1116/1.1609474
/content/avs/journal/jvstb/21/5/10.1116/1.1609474
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/content/avs/journal/jvstb/21/5/10.1116/1.1609474
2003-09-22
2015-08-05
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/21/5/10.1116/1.1609474
10.1116/1.1609474
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