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Electrical characteristics of metal–insulator–semiconductor Schottky diodes using a photowashing treatment in pseudomorphic high electron mobility transistors
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10.1116/1.1612514
/content/avs/journal/jvstb/21/5/10.1116/1.1612514
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/21/5/10.1116/1.1612514
/content/avs/journal/jvstb/21/5/10.1116/1.1612514
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/content/avs/journal/jvstb/21/5/10.1116/1.1612514
2003-09-15
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characteristics of metal–insulator–semiconductor Schottky diodes using a photowashing treatment in AlxGa1−xAs/InGaAs(X=0.75) pseudomorphic high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/21/5/10.1116/1.1612514
10.1116/1.1612514
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