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Characteristics of thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices
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10.1116/1.1640398
/content/avs/journal/jvstb/22/1/10.1116/1.1640398
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/1/10.1116/1.1640398
/content/avs/journal/jvstb/22/1/10.1116/1.1640398
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/content/avs/journal/jvstb/22/1/10.1116/1.1640398
2004-01-20
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/1/10.1116/1.1640398
10.1116/1.1640398
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