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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors
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10.1116/1.1640659
/content/avs/journal/jvstb/22/1/10.1116/1.1640659
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/1/10.1116/1.1640659
/content/avs/journal/jvstb/22/1/10.1116/1.1640659
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/content/avs/journal/jvstb/22/1/10.1116/1.1640659
2004-02-03
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/1/10.1116/1.1640659
10.1116/1.1640659
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