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Post-growth process relaxation properties of strained quantum well heterostructures grown by molecular beam epitaxy
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10.1116/1.1651551
/content/avs/journal/jvstb/22/2/10.1116/1.1651551
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/2/10.1116/1.1651551
/content/avs/journal/jvstb/22/2/10.1116/1.1651551
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/content/avs/journal/jvstb/22/2/10.1116/1.1651551
2004-02-25
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Post-growth process relaxation properties of strained Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well heterostructures grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/2/10.1116/1.1651551
10.1116/1.1651551
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