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Study of highly selective wet gate recess process for based pseudomorphic high electron mobility transistors
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10.1116/1.1761216
/content/avs/journal/jvstb/22/4/10.1116/1.1761216
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/4/10.1116/1.1761216
/content/avs/journal/jvstb/22/4/10.1116/1.1761216
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/content/avs/journal/jvstb/22/4/10.1116/1.1761216
2004-06-30
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of highly selective wet gate recess process for Al0.25Ga0.75As/GaAs based pseudomorphic high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/4/10.1116/1.1761216
10.1116/1.1761216
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