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Structural and electrical properties of and gate dielectrics in TaN gated nMOSCAP and nMOSFET devices
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10.1116/1.1771664
/content/avs/journal/jvstb/22/4/10.1116/1.1771664
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/4/10.1116/1.1771664
/content/avs/journal/jvstb/22/4/10.1116/1.1771664
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/content/avs/journal/jvstb/22/4/10.1116/1.1771664
2004-07-13
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical properties of HfOxNy and HfO2 gate dielectrics in TaN gated nMOSCAP and nMOSFET devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/4/10.1116/1.1771664
10.1116/1.1771664
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