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Film properties of ALD and gate dielectrics grown on Si with various pre-deposition treatments
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10.1116/1.1773840
/content/avs/journal/jvstb/22/4/10.1116/1.1773840
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/4/10.1116/1.1773840
/content/avs/journal/jvstb/22/4/10.1116/1.1773840
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/content/avs/journal/jvstb/22/4/10.1116/1.1773840
2004-08-19
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/4/10.1116/1.1773840
10.1116/1.1773840
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