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Formation of shallow junctions using SiGe barriers
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10.1116/1.1784825
/content/avs/journal/jvstb/22/5/10.1116/1.1784825
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/5/10.1116/1.1784825

Figures

Image of FIG. 1.
FIG. 1.

Configuration of the two types of samples. In (a) the top Si layer is B doped followed, by a SiGe barrier layer. In (b) the top Si layer is undoped, followed by a SiGe barrier layer.

Image of FIG. 2.
FIG. 2.

B atomic profiles of ultrashallow layers grown in Si with a diffusion barrier (a) and with a diffusion barrier (b), as-grown and after anneals.

Image of FIG. 3.
FIG. 3.

B atomic profiles of ultrashallow layers produced by implantation into a Si layer with a diffusion barrier (, 0.1, 0.2, and 0.4). Samples have been spike annealed at . Two B implantation doses have been used: (a) and (b).

Image of FIG. 4.
FIG. 4.

Comparison of sheet resistance as a function of junction depth. The B ion-implanted layers have undergone a thermal activation process described in the cited sources. The sheet resistance of the idealized box profile having carrier concentration of is provided to show theoretical limits.

Tables

Generic image for table
TABLE I.

Summary of results of B redistribution in a LTMBE-grown shallow junction structure [Fig. 1(a)] after a FA.

Generic image for table
TABLE II.

Summary of results of B redistribution in a implanted shallow junction layer after a spike anneal. was plasma implanted into the structure shown in Fig. 1(b).

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/content/avs/journal/jvstb/22/5/10.1116/1.1784825
2004-10-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of p+ shallow junctions using SiGe barriers
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/5/10.1116/1.1784825
10.1116/1.1784825
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