Configuration of the two types of samples. In (a) the top Si layer is B doped followed, by a SiGe barrier layer. In (b) the top Si layer is undoped, followed by a SiGe barrier layer.
B atomic profiles of ultrashallow layers grown in Si with a diffusion barrier (a) and with a diffusion barrier (b), as-grown and after anneals.
B atomic profiles of ultrashallow layers produced by implantation into a Si layer with a diffusion barrier (, 0.1, 0.2, and 0.4). Samples have been spike annealed at . Two B implantation doses have been used: (a) and (b).
Comparison of sheet resistance as a function of junction depth. The B ion-implanted layers have undergone a thermal activation process described in the cited sources. The sheet resistance of the idealized box profile having carrier concentration of is provided to show theoretical limits.
Summary of results of B redistribution in a LTMBE-grown shallow junction structure [Fig. 1(a)] after a FA.
Summary of results of B redistribution in a implanted shallow junction layer after a spike anneal. was plasma implanted into the structure shown in Fig. 1(b).
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