Cross-sectional schematic of the fabrication steps for the -Si:H photoconductive sensor array on a convex glass substrate (not to scale). These are deposition of the bottom Cr contact layer on the substrate by thermal evaporation; definition of the resist-level for the sensing elements via molding of a photocured polyurethane template (top four panels); deposition of the -Si:H and top Cr layers (fifth panel); and liftoff of the polyurethane to define the array of sensing elements (bottom panel).
Photograph of the resist pattern created by the MIMIC process on the spherical lens (top) and an expanded view of the MIMIC mold (bottom).
Expanded view of the pixel elements (top) and their dimensions (bottom).
Static characteristics of -Si:H sensor elements: (a) current-voltage characteristics with and without illumination; (b) current-light intensity characteristics at a bias of 20 V. The peak intensity of the light is at a wavelength of .
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