(a) B profiles from splits of and . The integrated B doses of the annealed profiles are , and , respectively. (b) B profiles from splits , , , and . The integrated B doses of the annealed profiles are and for , and , respectively.
(a) F profiles from , and . F out-diffusion and bell-shaped F profiles are observed. An estimate from SIMS shows of the as-implanted F was out-diffused after the RTA. (b) Comparison of B and F profiles in and cases. The excess Si interstitials generated by a F implant makes B diffuse more in . The arrow points from the as-implanted profile to the annealed profile. The integrated B doses of the annealed profiles are and for , and , respectively.
Summary of vs in this study. It shows that the deeper F implant degrades the performance.
Experimental design and measurements. The was evaluated at the depth of and the values in this table were the average values from 49 points measurements. The RTA condition is in ambient.
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