NMR spectrum of the HFCVD PGMA film deposited at filament temperature of . The signal assignments are summarized in Table II, which strongly supports the linear polymer structure and the retention of pendant epoxide rings in the HFCVD films.
Atomic force micrographs showing effect of increasing filament temperature on the morphologies of deposited PGMA films. Films were deposited at an initiator/precursor flow ratio of 0.9 and filament temperatures of (a) , (b) , and (c) . The thickness of films is in the range of 250–360 nm. The morphology of a blank silicon wafer is shown in (d) for comparison. The corresponding 2D isotropic power spectral densities are displayed on the right.
Sensitivity curves of samples 1, 2, 3, and 4 using conventional development, showing effect of molecular weight on the electron-beam sensitivity of HFCVD PGMA films. Sample 1 exhibits an electron-beam sensitivity of . A PGMA film from solution polymerization and spin-coating with shows an electron-beam sensitivity of .
Features resolved for samples with different molecular weights using conventional development. Left image shows a 500 nm line pattern for sample 1 exposed at , right image shows a 300 nm line pattern for sample 5 exposed at .
SEM photographs showing 300, 200, 100, and features achieved in sample 3 exposed at an electron-beam dosage of followed by conventional development.
Sensitivity curves of samples 1, 2, and 4 using supercritical development with 2% acetone added. Sample 1 demonstrates an electron-beam sensitivity of .
300 and line/space patterns achieved for sample 3 exposed at an electron-beam dosage of followed by supercritical development.
Characteristics of HFCVD PGMA films.
NMR chemical shifts and signal assignments of the HFCVD PGMA film.
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