Fabrication of masters for nanoimprint, step and flash, and soft lithography using hydrogen silsesquioxane and x-ray lithography
Photoresist response curves upon exposure to x-ray lithography for HSQ in terms of the normalized residual thickness as a function of dose.
Top-down SEM micrographs of a HSQ master that has dense line structures with critical dimensions of approximately (a) , (b) , (c) , and (d) with a depth of . The darker stripes represent the raised regions or lines on the template structures.
Cross-sectional SEM micrographs of HSQ masters with dense line structures. Each master is characterized by the designed CD, height of features, actual line CD/actual space CD: (a) pitch, , ; (b) pitch, , ; (c) pitch, , ; (d) pitch, , ; (e) pitch, , ; (f) pitch, , .
Top-down SEM micrographs of dense line structures with critical dimensions of (a) and (b) imprinted on a polymeric resist substrate (mr-I 8030) with a thickness of . The corresponding cross-sectional SEM images are shown in images (c) and (d), respectively. The darker stripes on the top-down SEM images represent the trenches of the imprinted structures.
Top-down SEM micrographs of dense line structures with critical dimensions of imprinted on (a) a poly(dimethylsiloxane) substrate that was then used to mold the structures onto (b) a thin polyurethane film.
HSQ processing conditions.
Measurement of the contact angles of DI water on a x-ray exposed HSQ film and a substrate before and after treatment with a low surface energy release agent monomer (tridecafluoro-1,1,2,2-tetrahydrooctyl trichlorosilane).
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