Schematic diagrams of the system used in this study. (a) A transformer coupled plasma (TCP) etcher with a Faraday cage set on the cathode. Dimensions of the apparatus: Cathode , spacing between the dielectric window and , cage , grid-wire , and grid . (b) The step-shaped substrate inside the Faraday cage.
Optical emission spectra of , , and plasmas. (a) Broad band near . (b) F peak at . (c) Emission intensities of the F and radicals, and ratio.
Deposition rates on sidewalls (A) and (B), the redep-effect, and the ratio of the redep-effect to the deposition rate on sidewall (A) for , , and .
(a) Deposition rates on sidewall (A) and concentrations, (b) bottom etch rates and ratios, and (c) the redep-effect and bottom etch rates for , , and .
FT-IR spectra of sidewalls, showing a Si–O stretching peak around for (a) , (b) , and (c) . The sidewall before etching was used as a background sample for IR measurements.
Auger depth profiles of C, O, F, and Si atoms of sidewall (A) for (a) , (b) , and (c) .
Surface (rms) roughness of sidewalls (A) and (B) for , , and .
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