1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Annealing temperature stability of Ir and Ni-based Ohmic contacts on high electron mobility transistors
Rent:
Rent this article for
USD
10.1116/1.1814111
/content/avs/journal/jvstb/22/6/10.1116/1.1814111
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/6/10.1116/1.1814111
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Drain characteristics from HEMTs with both types of Ohmic metallization, measured at .

Image of FIG. 2.
FIG. 2.

Drain characteristics from HEMTs with both types of Ohmic metallization, measured at .

Image of FIG. 3.
FIG. 3.

Measurement temperature dependence of drain current at zero gate voltage for the two types of Ohmic metallization.

Image of FIG. 4.
FIG. 4.

Measurement temperature dependence of peak transconductance for the two types of Ohmic metallization.

Image of FIG. 5.
FIG. 5.

Measurement temperature dependence of contact resistivity for the Ir and Ni-based contacts.

Image of FIG. 6.
FIG. 6.

Measurement temperature dependence of HEMT threshold voltage for devices with the two types of Ohmic contacts.

Image of FIG. 7.
FIG. 7.

Measurement temperature dependence of HEMT knee voltage for devices with the two types of Ohmic contacts.

Loading

Article metrics loading...

/content/avs/journal/jvstb/22/6/10.1116/1.1814111
2004-11-04
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN∕GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/6/10.1116/1.1814111
10.1116/1.1814111
SEARCH_EXPAND_ITEM