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Silicon nitride gate dielectric for top-gated carbon nanotube field effect transistors
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10.1116/1.1824048
/content/avs/journal/jvstb/22/6/10.1116/1.1824048
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/6/10.1116/1.1824048
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-section view of top-gate nanotube transistor.

Image of FIG. 2.
FIG. 2.

Detailed processing steps (not to scale).

Image of FIG. 3.
FIG. 3.

characteristics of a top-gated CNTFET using silicon nitride gate dielectric (dielectric thickness ; gate length ; ).

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/content/avs/journal/jvstb/22/6/10.1116/1.1824048
2004-12-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon nitride gate dielectric for top-gated carbon nanotube field effect transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/22/6/10.1116/1.1824048
10.1116/1.1824048
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