Transfer of e-beam pattern to diamond. (a) Sub- lines defined in negative resist and etched into diamond (HSQ mask still present). (b) Sub- lines etched into diamond. HSQ mask has been stripped by immersion in HF.
Transfer of e-beam pattern to SiC after development in MF322 for . (a) Sub- isolated line in thick resist. (b) semidense lines in HSQ. Some evidence of resist collapse can be seen at the end of the lines, with resist residue toward the center of the pattern. (c) Semidense lines transferred to SiC after RIE etch in (HSQ mask still present).
Pattern transferred to SiC after removal of HSQ mask. (a) Isolated line etched into SiC. (b) semidense lines etched into SiC.
Patterns from the diamond and SiC stamps mechanically pattern transferred into nickel. (a) Sub- lines transferred into nickel using a diamond stamp. (b) Nickel embossed using SiC stamp; the widths of the lines varies between .
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