Process schemes of transferring resist patterns exposed by EUV-IL into (a) Si and (b) substrates to be used as NIL stamps.
AFM images of EUV exposed PMMA patterns. The initial PMMA thickness used for exposure was 105 and for patterns of 50 and half pitch, respectively. Half pitch is denoted as HP in figures.
(a) SEM images for Si stamps with lines of 35.5, 42.5, and half pitches which were produced using the procedure shown in Fig. 1(a). The depth of all patterns was , as measured from AFM. (b) AFM images for stamps produced using the procedure shown in Fig. 1(b).
AFM images for imprinted PMMA with stamps of pillars and gratings with 25.5 and half pitches, respectively.
Dark field optical microscope, SEM, and AFM images: (a) for EUV-IL exposed PMMA, (b) after transferring the pattern into Si to be used as a NIL stamp, and (c) imprinted PMMA using the stamp shown in (b). The half pitch of the pattern is and the area of patterns is .
AFM image for the imprinted PMMA of half pitch and depth patterned over the area of .
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