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Stamps for nanoimprint lithography by extreme ultraviolet interference lithography
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View: Figures


Image of FIG. 1.
FIG. 1.

Process schemes of transferring resist patterns exposed by EUV-IL into (a) Si and (b) substrates to be used as NIL stamps.

Image of FIG. 2.
FIG. 2.

AFM images of EUV exposed PMMA patterns. The initial PMMA thickness used for exposure was 105 and for patterns of 50 and half pitch, respectively. Half pitch is denoted as HP in figures.

Image of FIG. 3.
FIG. 3.

(a) SEM images for Si stamps with lines of 35.5, 42.5, and half pitches which were produced using the procedure shown in Fig. 1(a). The depth of all patterns was , as measured from AFM. (b) AFM images for stamps produced using the procedure shown in Fig. 1(b).

Image of FIG. 4.
FIG. 4.

AFM images for imprinted PMMA with stamps of pillars and gratings with 25.5 and half pitches, respectively.

Image of FIG. 5.
FIG. 5.

Dark field optical microscope, SEM, and AFM images: (a) for EUV-IL exposed PMMA, (b) after transferring the pattern into Si to be used as a NIL stamp, and (c) imprinted PMMA using the stamp shown in (b). The half pitch of the pattern is and the area of patterns is .

Image of FIG. 6.
FIG. 6.

AFM image for the imprinted PMMA of half pitch and depth patterned over the area of .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stamps for nanoimprint lithography by extreme ultraviolet interference lithography