No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications
Data & Media loading...
Article metrics loading...
Full text loading...