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Improved characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition
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10.1116/1.1835311
/content/avs/journal/jvstb/23/1/10.1116/1.1835311
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/1/10.1116/1.1835311
/content/avs/journal/jvstb/23/1/10.1116/1.1835311
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/content/avs/journal/jvstb/23/1/10.1116/1.1835311
2004-12-28
2015-01-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved C–V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/1/10.1116/1.1835311
10.1116/1.1835311
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