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Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures
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10.1116/1.1835317
/content/avs/journal/jvstb/23/1/10.1116/1.1835317
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/1/10.1116/1.1835317
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Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-section of the lattice-matched /InP QW structure, made of five sets of two identical QWs with different spacings. The well width was either 10 or 5 nm. The InGaAs QWs were nominally undoped and the -InP layers (barriers) were doped to .

Image of FIG. 2.
FIG. 2.

SSRM data obtained on the sample B: (a) representative SSRM image and (b) averaged resistance profile. The sample dc bias was 0.5 V.

Image of FIG. 3.
FIG. 3.

SSRM profiles obtained for sets 1 and 2 in both samples A and B. The sample dc bias was −0.5 V in both profiles.

Image of FIG. 4.
FIG. 4.

SSRM profile obtained for set 3 in sample B. The FWHMs of the dips in the SSRM signal at the QWs are indicated on the figure. The sample dc bias was −0.5 V.

Image of FIG. 5.
FIG. 5.

SSRM profiles obtained for sets 4 and 5 in sample A for different (sample) dc biases. (a) Reverse bias: 0.5 V (black), 1 V (gray), and 2 V (light gray). (b) Forward bias: −0.2 V (black) and −0.5 V (gray).

Image of FIG. 6.
FIG. 6.

SSRM profiles obtained for sets 1 and 2 in sample A for two different cantilever deflection set-points: 0.1 (black) and 0.3 V (gray).

Image of FIG. 7.
FIG. 7.

SCM data obtained for sample A: (a) representative SCM image and (b) the corresponding averaged profile. The dc and the ac biases were −0.8 and 2 V, respectively.

Image of FIG. 8.
FIG. 8.

SCM profiles obtained for sets 2 and 3. (a) In sample A, the ac and dc biases were 2 V and −0.2 V, respectively. (b) In sample B; the ac and dc biases were 2 V and −1 V, respectively.

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/content/avs/journal/jvstb/23/1/10.1116/1.1835317
2004-12-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/1/10.1116/1.1835317
10.1116/1.1835317
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