Schematic cross-section of the lattice-matched /InP QW structure, made of five sets of two identical QWs with different spacings. The well width was either 10 or 5 nm. The InGaAs QWs were nominally undoped and the -InP layers (barriers) were doped to .
SSRM data obtained on the sample B: (a) representative SSRM image and (b) averaged resistance profile. The sample dc bias was 0.5 V.
SSRM profiles obtained for sets 1 and 2 in both samples A and B. The sample dc bias was −0.5 V in both profiles.
SSRM profile obtained for set 3 in sample B. The FWHMs of the dips in the SSRM signal at the QWs are indicated on the figure. The sample dc bias was −0.5 V.
SSRM profiles obtained for sets 4 and 5 in sample A for different (sample) dc biases. (a) Reverse bias: 0.5 V (black), 1 V (gray), and 2 V (light gray). (b) Forward bias: −0.2 V (black) and −0.5 V (gray).
SSRM profiles obtained for sets 1 and 2 in sample A for two different cantilever deflection set-points: 0.1 (black) and 0.3 V (gray).
SCM data obtained for sample A: (a) representative SCM image and (b) the corresponding averaged profile. The dc and the ac biases were −0.8 and 2 V, respectively.
SCM profiles obtained for sets 2 and 3. (a) In sample A, the ac and dc biases were 2 V and −0.2 V, respectively. (b) In sample B; the ac and dc biases were 2 V and −1 V, respectively.
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